发明名称 MOLECULAR BEAM CRYSTAL GROWING DEVICE
摘要 PURPOSE:To improve the through put of the title device by a method wherein an atmosphere rich in film-formation accelerating agent is provided in the period of movement of a sample, thereby enabling to immediately start the formation of a film at the position where a molecular beam is made to irradiate. CONSTITUTION:The samples 70 charged in the cassette of a preparatory chamber 50 are carried by a conveying device 80, and they are placed on a sample holder 46 successively. Subsequently, a gate valve 60 is closed, a vacuum chamber 10 is airtightly sealed, and the sample 70 placed on the sample holder 46 is heated up to the prescribed temperature by an electric heater. Ga and As are discharged from a molecular beam source 20 in the state of molecule. On the other hand, a rotating plate 43 is rotated in such a manner that it corresponds to the irradiated position with the molecular beam emitted from the source of molecular beam after the sample 70 corresponds to the irradiated position with the molecular beam sent from an auxiliary molecular beam source 21. This rotation is continued during the period of formation of the film on the sample 70, and an As-rich atmosphere is formed directly before the sample 70 is moved to the position of irradiation of the molecular beam emitted from the molecular beam source 20, and the formation of film is started at the point of time when the sample 70 is brought to the irradiated position of molecular beam emitted from the molecular beam source 20.
申请公布号 JPS61236111(A) 申请公布日期 1986.10.21
申请号 JP19850076363 申请日期 1985.04.12
申请人 HITACHI LTD 发明人 OKUNO SUMIO;KANAI NORIO;UCHIMAKI YOICHI
分类号 H01L21/203 主分类号 H01L21/203
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