发明名称 HIGH-FREQUENCY ION BOMBARDMENT DEVICE
摘要 PURPOSE:To enable effective ion bombardment, by applying a high-frequency voltage to a rotating substrate holder through a helical auxiliary electrode on a substrate support base supporting the holder. CONSTITUTION:A helical auxiliary electrode 14 is provided in a vacuum container. When high-frequency power is supplied through the electrode 14, an introduced gas is changed into plasma by the action of the helical portion of the electrode. The gas is thus ionized efficiently so that stable discharge is continued, and a DC voltage is produced between the plasma and the electrode 14 and a substrate support base 6 and applied as a bias to a substrate holder 4 through a bearing 5. Charged particles accelerated by the high-frequency discharge and the bias voltage are bombarded upon the surface of a substrate 3 to clean up the surface and make the density of an evaporation-deposited film.
申请公布号 JPS61233957(A) 申请公布日期 1986.10.18
申请号 JP19850074306 申请日期 1985.04.10
申请人 NIPPON SHINKU KOGAKU KK 发明人 YOSHIDA SATORU;MIYAKE MASAAKI;SAWAKI TSUKASA;HARA KAZUO
分类号 C23C14/50;C23F1/08;C23F4/00;H01J37/32 主分类号 C23C14/50
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