| 摘要 |
PURPOSE:To increase the area of a film, to improve the productivity and to manufacture in a mass production by implanting a compound which contains silicon and halogen, and active seed produced by germanium-containing compound for forming a film into a film forming space, operating a thermal energy to form an accumulated film. CONSTITUTION:A thermal energy is acted in the presence of a compound which contains silicon and halogen and an active seed produced by germanium- containing compound for forming film instead of generating a plasma in the space for forming an accumulated film to form the accumulated film. The compound which contains the silicon and the halogen includes, for example, SiF4. The seed which optimally has 10sec or longer life is used from the point of productivity and handling. The germanium-containing compound includes, for example, GeH4. The ratio of the compound which contains the silicon and the halogen in the film forming space and the seed is preferably 8:2-4:6. |
