| 摘要 |
PURPOSE:To enable to ion implant with low energy and to eliminate a photolithographic step by ionizing an impurity source to an SOR light having preferable ionizing efficiency, and applying a magnetic field perpendicular to a substrate in case of accelerating ions by an electric field, thereby suppressing the lateral motion of the ions. CONSTITUTION:An SOR light 10 emitted from an electron accumulation ring, not shown, out of a reaction chamber 3 as designated in the traveling direction by an arrow is passed through a reflecting mirror 11 and a condensing system 12 to focus on a substrate 1. The mirror 11 is moved in parallel with the substrate 1, and the light 10 is scanned on the surface of a region 12 for implanting boron on the substrate 1 not shielded by a mask 5. Cationic ions 15 of the boron area generated from BF3 molecules 14 around the substrate 1 presented in the chamber 3. When the ions 15 are implanted into the substrate in this manner, currents are sent to coils 17, 17a, and a magnetic field of approx. 10<5> gauss of magnetic flux density having a direction 18 perpendicular to opposed electrodes 2, 4 is applied to the chamber 3. |
