| 摘要 |
PURPOSE:To prevent an oxide film (bird beak) from growing on an element region under a nitride film by modifying a pad oxide film end under a nitride film as an oxidation resistant mask and the surface of a silicon substrate near the end to the oxidation resistance by nitriding, and then field oxidizing them. CONSTITUTION:After a pad oxide film 12, a nitride film 13 and an NSG film 14 are grown on a P-type silicon substrate 11, a hole 16 is formed with a resist pattern 15 as a mask. Then, after channel stop ions are implanted to the surface of a substrate 11 exposed by the hole 16, the pattern 15 is removed, and plasma nitriding is executed in high temperature ammonia gas atmosphere. Then, a nitride film 17 is formed. Subsequently, when an NSG film 18 and the film 17 are etched and removed until the film 17 is removed, the film 17 remains only on the portion coated with a side wall 18a. Then, a field oxide film 19 is formed by oxidizing in the high temperature oxidative atmosphere, and then treated with a fluoric acid etchant. |
