| 摘要 |
PURPOSE:To make it possible to ensure self-excited oscillation, by providing two neighboring oscillating regions, and utilizing the mutual interference of the oscillations in both regions. CONSTITUTION:Absorption of oscillated light by N- and P-type GaAs layers 2 and is less. Therefore, when an injected current is increased, at first oscillation is started in a left active layer region corresponding to a wide groove. When the injected current is further increased, oscillation is also started in a right active region corresponding to the right groove, whose loss is large. At this time, since the two active regions are close, intense mutual interference occurs. When the injected current is further increased and the carrier density in the right active layer region reaches a certain level, the oscillation, which occurs in the right active layer region, is extended to the left active layer region, and light emitting recombination of the carriers is increased. Then, the oscillation in the right active layer region is stopped. As a result, the intensity of the oscillated light in the left active layer region, in which factors hampering the oscillation are eliminated, is restored to the initial state, and the self-excited oscillation, which is fluctuated in time, is obtained.
|
