| 摘要 |
PURPOSE:To make it possible to ensure self-excited oscillation, by two neighboring oscillating regions, whose oscillations interfere to each other. CONSTITUTION:On an N-type GaAs substrate 1, the following layers are sequentially formed: an N-type AlxGa1-x clad layer 2 (0<=x<=z,u); an AlyGa1-yAs active layer 3; a P-type AlzGa1-zAs clad layer 4; an N-type GaAs block layer 5; a P-type AluGa1-uAs second clad layer 6; and a P-type GaAs cap layer 7. Parts of the N-type GaAs block layer 5 are removed in a stripe shape. There are two stripe-shaped removed parts. They are neighboring to each other in parallel and have the different widths. An electrode 8 and an electrode 9 are formed on the N-type GaAs substrate 1 and the P-type GaAs cap layer 7, respectively. Self-excited oscillation is easy to occur since the oscillation occurs by the mutual action of two resonators.
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