| 摘要 |
PURPOSE:To control the recrystallization by providing the shield panel for restricting an energy injecting region into a semiconductor layer by an energy source between the energy source and the semiconductor layer. CONSTITUTION:A base is moved in a horizontal plane and a slit 5a of a slit board 5 is arranged in the position from an Si wafer 7. Under these conditions, a carbon heater 3 is energized and is heated to a predetermined temperature. The base is moved to move the slit board 5 in direction A at a predetermined velocity. At this time, the heat radiation from the carbon heater 3 to the Si wafer 7 are restricted within the slit 5a so that only the polycrystalline Si film 8 of the part corresponding to the under part of the slit 5a is heated to be fused. The fused region shifts in direction A on the Si wafer according to the movement of the slit 5a. The fused Si layer is recrystallized successively from the end part of the Si wafer 7 where cooling has started after the slit 5a passed and when the slit 5a moves and recrystallization has completed over the entire surface, the single crystal Si thin film is formed. |
