发明名称 REFERENCE VOLTAGE GENERATION CIRCUIT AND CONTROL THEREOF
摘要 <p>A read only memory (ROM) includes a series of bit lines biased by a reference voltage lead (102). The reference voltage lead (102) is connected to a first reference voltage generator (100) having an output impedance of 25 ohms and a second reference voltage generator (104) having an output impedance of 75,000 ohms. When the ROM is deselected, the first reference voltage generator (100) turns off and the bit lines are biased by the second reference voltage generator (100). However, when the ROM is selected, the first reference voltage generator (100) is turned on and biases the bit lines. In this way, a ROM is provided which can operate in a low power mode without decreasing the access time when the ROM goes from a deselected state into a selected state.</p>
申请公布号 JPS61233499(A) 申请公布日期 1986.10.17
申请号 JP19850299716 申请日期 1985.12.26
申请人 AMERICAN MICROSYST INC 发明人 SESHIRU KONKURU;KUAJI MAMUUDO
分类号 G11C17/00;G05F3/24;G11C5/14;G11C7/12;G11C16/06;G11C17/12 主分类号 G11C17/00
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