| 摘要 |
PURPOSE:To increase the electrostatic breakdown capacity of an element of this kind by absorbing input pulses not only in a section between an input terminal and a power terminal but also in a section between the input terminal and a grounding terminal. CONSTITUTION:An N-type region in a P-N junction forming a resistor R is not connected to an N<+> type collector contact layer 2 but connected to a P-type substrate 1 by surrounding the periphery of the resistor R by an insulating layer 10 as an element isolation region, thus forming a vertical type P-N-P parasitic transistor. When the element is disposed to an input section to an integrated-circuit semiconductor device as an electrostatic breakdown preventive element, the electrostatic resistance of a device can be improved. Transistors Q1, Q2 are turned ON by the ingress of the input pulses of high voltage to an input terminal IN, and the input pulses are absorbed between the input terminal IN and a power terminal VCC and between the input terminal IN and a grounding terminal VEE. |
