发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to obtain a sufficiently high connection strength by a method wherein the direction of ultrasonic vibrations to be applied is made to coincide with the extended direction of the rolled scars on the surface of the lead. CONSTITUTION:A metal wire 1 is bonded with a lead 2 in the same way as the conventional one by an ultrasonic wave combined thermocompression bonding system, yet at that time, the direction A of ultrasonic vibrations to be applied is made to coincide with the extended direction of rolled scars 2a on the surface of the lead 2. Whereupon a smooth slide is generated between the metal wire 1 and the lead 2 by the action of the ultrasonic vibrations and a dew condensation phenomenon of both is promoted. The ultrasonic vibrations act efficiently on the wire 1 in such a way, the wire 1 is never deformed so much and a bonding of the wire 1 and the lead 2 is performed. Accordingly, the desired bonding strength can be secured, and furthermore, as the amount of deformation of the wire is small, the amount of deformation of the neck part is also small and the strength of the neck can be sufficiently secured. As a result, a sufficiently high connection strength can be secured and the reliability of the connection is improved.
申请公布号 JPS61231733(A) 申请公布日期 1986.10.16
申请号 JP19850073032 申请日期 1985.04.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 MACHIDA KAZUMICHI;HIROTA SANEYASU;SHIBUYA YOKO;OMAE SEIZO
分类号 H01L21/603;H01L21/60;H01L21/607 主分类号 H01L21/603
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