发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the generation of a short circuit between terminals and defective insulation by conducting low-pressure transfer molding treatment, in which a semiconductor chip fitted to a lead frame is positioned into a mold, by using the mold in which a magnet is buried into a resin injection path. CONSTITUTION:In a mold for casting into which a magnet is buried, a doughnut- shaped magnet 14 is buried to a cull 12 section under a pot 7 and a cylindrical magnet 15 to a runner 13 section. When the magnets 14, 15 are buried previously to the cull 12 section, into which a resin is injected, and the runner 13 section, considerable magnetic powder is adsorbed, and the quantity of existence in a cavity can be reduced. Since magnetic powder adsorbed to the magnets 14, 15 cures under the state, in which it is made to be contained in the resin, as it is, is removed together with the resin when a cured resin is removed. Accordingly, the generation of defective short circuits among inner leads or bonding wires or defective insulation can be minimized.
申请公布号 JPS61232628(A) 申请公布日期 1986.10.16
申请号 JP19850074739 申请日期 1985.04.09
申请人 FUJITSU LTD 发明人 SONO RIKURO;KITASAKO HIROYUKI;KAWAHARA TOSHIMI;MAKI SHINICHIRO;MURAKI KAZUHIRO
分类号 B29C39/10;B29C39/26;B29C45/14;B29K63/00;B29K105/20;B29L31/34;H01L21/56 主分类号 B29C39/10
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