| 摘要 |
PURPOSE:To enable to improve the heat-radiating effect of a semiconductor wafer by a method wherein the titled holding mechanism is constituted in such a structure that even when a thermal expansion is generated in the semiconductor wafer by heating the semiconductor wafer, the close adhesion of the said wafer and the supporting plate supporting the wafer is not damaged. CONSTITUTION:The placing surface for a semiconductor wafer 1 in a supporting plate 4 is formed into a recessed spherical material 8 and the central part of the recessed spherical material 8 is provided with an exhaust hole 7 penetrating through the foregoing supporting plate 4. This exhaust hole 7 is one being connected to the empty pump and when the said semiconductor wafer 1 is placed on the foregoing supporting plate 4, the exhaust hole 7 is made to suck air. After the semiconductor wafer 1 is placed on the supporting plate 4, the vacuum pump is made to drive, and at the same time, wafer presses 5 are made to translate on the side of the supporting plate 4. When the holding mechanism is constituted in such a way, a processing treatment can be performed on the semiconductor wafer 1 in a state that the semiconductor wafer 2 is being closely adhered on the recessed spherical material 8 of the supporting plate 4. At this time, even though the semiconductor wafer 1 itself is made to thermally expand by the heat treatment, a force only to attempt to displace acts on the side of the foregoing recessed spherical material 8. As a result, such a trouble that the close adhesion of the semiconductor wafer 1 and the supporting plate 4 is damaged is eliminated. |
