| 摘要 |
PURPOSE:To obtain the titled device with high moisture-resistant property and high reliability by a method wherein an inorganic film is formed on an uppermost transparent organic system resin coating layer and in the parts of the transparent organic system resin coating layer and the inorganic film above a pad, and a pad open aperture is provided. CONSTITUTION:A polyimide layer 9 is formed on a substrate 1 on which a film transistor and a light detection element are formed beforehand. The thickness of the layer 9 is obtained arbitrarily by the viscosity of polyimide solution or the revolution of a spinner. The layer 9 is cured at the temperature not higher than 300 deg.C in order to avoid deterioration of the characteristics of alpha-Si:H. On the layer 9, an SiO2 film 10 is deposited by a plasma CVD method or a sputtering method. Further, a photoresist layer is applied to form a resist mask 13 for a pad open aperture. Then the SiO2 film 10 is etched by solution of fluoric acid or the like. Then O2 plasma etching is performed. At the same time, the resist mask 13 is also etched. Therefore, etching of polyimide and removal of the resist are carried out simultaneously. |
