| 摘要 |
PURPOSE:To prevent deterioration caused by light application by a method wherein a non-single crystal semiconductor, including an amorphous semiconductor, containing hydrogen or halogen is annealed by light and column shape grains with anisotropy are formed by promoting crystallization. CONSTITUTION:A light permeable conductive film, which is the first conductive film (2), is formed on the whole surface of a substrate with an insulating surface, for instance a glass substrate (1). Then a non-single crystal semiconductor layer which generates a photo-electromotive force by light application, i.e. a non-single crystal semiconductor layer (3) which has a PIN junction and is doped with hydrogen or halogen, is formed on the first conductive film (2). Pulse shape high intensity light whose wavelength is not less than 500nm and not longer than 5mum is applied to the non-single crystal semiconductor. With this method, when the light with a wavelength of 0.7mum is applied, a region in which the crystallization (structure with more advanced order compared to the initial amorphous structure) of column shape grains is promoted is formed over a full thickness of one layer in the non-single crystal semiconductor and, when the light with a wavelength of 0.53mum is applied, the same region is formed over the depth of 3,000-5,000Angstrom , or about a half of the thickness of the layer. |
