| 摘要 |
PURPOSE:To suppress a parasitic transistor effect by surrounding the second transistor which decreases at a conductive region lower than the potential of a semiconductor substrate with the conductive region which is part of the first transistor. CONSTITUTION:The first transistor 4 or 6 which flows a drive current to a motor 2 is provided, and the second transistor 8 or 10 which inputs a drive current flowed to the motor 2 is provided. An epitaxial layer 34a is formed on the surface layer of a semiconductor substrate 30. The transistors 4, 6 are formed on the layer 34a, and the second epitaxial layer 34b is formed by dividing by the second separating region 38. Since the layer 34b forms the the collector regions of the transistors 8, 10, the transistors 8, 10 are surrounded by the layer 34a as the collector regions of the transistors 4, 5 through the region 38. |
