| 摘要 |
PURPOSE:To easily obtain a high-grade SOI crystal by relaxing growth conditions for making the SOI crystal to grow, by using laminated materials, in which more than two kinds of thin films are laminated in more than two piles, as insulators forming SOI structure, and selecting their film thickness and material quality so as to equivalently equalize thermal conductivity at the seed part. CONSTITUTION:Insulators forming SOI structure on a silicon substrate 1 are composed of oxidized films 2, 4, and silicon carbide 3 being put between the films. The oxidized film 2 is made to be 0.27mum thick, the silicon carbide 3 to be 0.46mum thick, the oxidized film 4 to be 0.27mum thick, and thereon followed by laminating polysilicon 5 of 0.5mum, an oxidized film 6 of 0.5mum, and a nitrided film 7 of 500Angstrom in thickness. Such a sample is melted by use of linear electron beams to make the SOI crystal to grow. As annealing conditions of the linear electron beams, acceleration voltage, beam current, scanning speed, and substrate temperature are 15kV, 85mA, 80cm/sec, and 600 deg.C, respectively; besides, the linear beam size is about 4mm in length and about 0.3mm in width. |
