| 摘要 |
PURPOSE:To precisely form a groove of arbitrary depth on the surface of a semiconductor substrate, by tracking the luminous intensity of atoms, molecules or ions thereof constituting a ground film of an etching mask used on etching the semiconductor substrate, so as to make clear the termination of etching. CONSTITUTION:A silicon oxide film 2 for relaxing a stress is made to grow about 200Angstrom thick on a silicon substrate 1, and then a silicon nitride film 3 is formed to be about 400Angstrom as a ground film of an etching mask by a chemical vapor-phase growth method. Thereafter a silicon oxide film 4 is formed as the etching mask by the chemical vapor-phase growth method, and further a region wherein a groove is to be formed is opened by a well-known photoetching technique. The etching of the silicon substrate 1 is started from this state, the silicon oxide film 4 serving as the etching mask is also etched together with the silicon substrate 1. When the overall silicon film 4 is etched with the further progress of etching, a groove having a target depth is formed. |
