| 摘要 |
PURPOSE:To prevent a reaction between a high-permittivity film and an electrode, to improve the insulating properties of a capacitance and to enhance reliability by interposing an silicon nitride film and an silicon oxide film between the high-permittivity film and the electrode. CONSTITUTION:A high-permittivity film 2 consisting of Ta2O5 as a high- permittivity material is formed onto the surface of an silicon substrate 1 as one electrode, and a metal is shaped and a Ta2O3 film can be formed directly through thermal oxidation or a chemical vapor phase growth method in the permittivity film 2. An silicon nitride film 3 is shaped onto the high-permittivity film 2, the silicon nitride film 3 is formed thinly in, preferably, approximately 100-200Angstrom , and a thin silicon oxide film 4 obtained by thermally oxidizing the silicon nitride film 3 is shaped onto the film 3. A polycrystalline silicon layer 5 is shaped onto the silicon oxide film 4 in predetermined thickness, and the layer 5 is constituted as another electrode. Accordingly, a capacitance section in which the silicon substrate 1 and the polycrystalline silicon layer 5 are used as electrodes opposed to each other and the high-permittivity film 2, the silicon nitride film 3 and the silicon oxide film 4 as dielectric films is constituted. |
