| 摘要 |
PURPOSE:To inhibit the increase of dark currents by plasma damage and dark currents by the formation of a transparent electrode by forming a Schottky contact, in which an opening section is shaped between a photoelectric conversion layer and the transparent electrode, or metal-insulating layer-semiconductor contact structure. CONSTITUTION:Chromium as a first electrode is evaporated onto a glass or ceramic substrate 1 in 1,000Angstrom , and etched to a plurality of insular sections through a photolithographic technique, thus forming discrete electrodes. The islands are shaped at pitches of 125mum in an image sensor of eight element/mm. Amorphous silicon 3 as a photosensitive layer is formed in thickness of 1mum, palladium 4 as a Schottky contact metal is shaped insularly in 1,000Angstrom , and palladium is removed by a cyanic group etching liquid so as to form an opening section in 100mum width through the photolithographic technique. Indium-tin-oxide ITO as a transparent electrode is shaped to a band shape in approximately 700Angstrom through a sputtering method, and a common electrode as a second electrode is formed, thus completing the image sensor. |
