| 摘要 |
PURPOSE:To obtain epitaxial silicon single crystal having a smooth growth surface advantageously in good yield, by using a substrate having a crystal face slightly tilted from the principal surface in epitaxial growth of the single crystal on a crystal substrate. CONSTITUTION:A seed crystal having a crystal orientation in (511) direction is first used, and a single crystal is pulled up from molten silicon by the Czochralski method to produce a single crystal rod 1 having (511) crystal direction of the rod axis. The resultant single crystal rod 1 is then cut within 1-10 deg. range tilting angle (theta) from the axis 2 in (255) direction to produce a crystal substrate 3, which is placed in a reaction chamber of an epitaxial growth apparatus, and a gaseous compound of semiconductor silicon, e.g. trichlorosilane, and a carrier gas are introduced thereinto to carry out epitaxial growth of the single crystal from the vapor phase on the substrate 3 by thermal decomposition or reduction and give the aimed silicon single crystal.
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