| 摘要 |
PURPOSE:To dry-etch a thin amorphous carbon film at a high rate of etching by causing glow discharge in gaseous CF4 contg. a specified amount of O2. CONSTITUTION:A cathode 13 which doubles as a top cover is placed opposite to a glass substrate 18 on an anode 17 in a hermetically sealed chamber 23, gaseous C2H2 diluted to 20% with gaseous H2 is introduced into the chamber 23 and glow discharge is caused between the anode 17 and the cathode 13 to form a thin amorphous carbon film on the substrate 18. When the thin amorphous carbon film is etched, the chamber 23 is evacuated, gaseous CF4 contg. >=2% O2 is introduced into the chamber 23, and glow discharge is caused between the electrodes 13, 17. The thin amorphous carbon film can be plasma- etched at a high rate of etching.
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