| 摘要 |
PURPOSE:To simply etch a thin amorphous carbon film by introducing gaseous H2 into an etching chamber and causing glow discharge. CONSTITUTION:A chamber 23 in which a thin amorphous carbon film is formed is evacuated to about 0.5Torr degree of vacuum, gaseous H2 is introduced into the chamber 23 at about 40cc/min flow rate, and high frequency electric power of 13.56MHz and 50-150W is supplied to cause glow discharge. A thin amorphous carbon film of about 1,000Angstrom thickness formed on the substrate 18 is etched by the glow discharge in several - ten-odd min.
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