| 摘要 |
PURPOSE:To form a conductive thin film and to prevent surface electrostatic charge by executing sputtering of conductive matter onto the surface of plastics by use of an organic gas. CONSTITUTION:Mutually parallel electrodes 2, 5 are oppositely provided in a reaction chamber 6 of a sputtering device and a plastic film 1 to be treated is put on the electrode 2. After evacuating the inside of the reaction chamber 6 to about 10<-4>Pa by use of an exhaust pipe 9, a gas made by mixing an inert gas such as Ar with an organic gas such as methane in 50:50 is introduced through a gas-introducing pipe 3 to adjust the pressure to 0.01-10Pa. Then a high frequency voltage is impressed from an electric power source 8 via matching box 7 to the electrode 5 to which any of Au, Pd, stainless steel and a mixture of SnO2 and In2O3 is attached as a target 4 to produce plasma between the electrodes 2, 5, so that the homogeneous conductive thin film in which the conductive matter is mixed with the organic gas component can be formed on the surface of the plastic 1 to prevent surface electrification.
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