PROCESS FOR MANUFACTURING BORON-DOPED GALLIUM ARSENIDE SINGLE CRYSTAL

摘要

A process for manufacturing boron-doped GaAs single crystals which comprises preparing a mixture of boron, gallium and arsenic covered by a liquid B2O3 encapsulant, melting the mixture, pulling up boron-doped GaAs crystals from the mixture melts in accordance with the LEC method, crushing those crystals into small pieces after removing the seed end therefrom, remelting those pieces in the presence of B2O3, and pulling up single crystals from the mixture melts in accordance with the LEC method.