Method of fabricating electrically connected regions of opposite conductivity type in a semiconductor structure

摘要

The two transistors of a bipolar flip-flop structure are interconnected by using a polycrystalline silicon/metal silicide sandwich structure. The polycrystalline silicon is doped to correspond to the underlying regions of the transistor structures, and undesired PN junctions created thereby are eliminated by depositing refractory metal silicide on the upper surface of the polycrystalline silicon.