| 摘要 |
PURPOSE:To facilitate the control of manufacturing process and the setting of conditions, by providing a metallic film with a plurality of apertures such that electrodes are interposed between the apertures with the longitudinal sides of the apertures disposed in parallel with the longitudinal sides of the electrodes and that each aperture has a different width. CONSTITUTION:Apertures are formed such that the portions remaining unopened between the apertures are located over gate electrodes 4a-4e and in parallel with each other, and that each of the unopened portions 7a-7e has a progressively larger width. Assuming that a metallic film 7d is over etched to be narrower than the gate electrode 4d, for example, a transistor formed by the gate electrodes 4a-4d is turned ON. This transistor is not turned ON in any way under the normal etching conditions. Accordingly, the over etched state can be detected by the transistor being turned ON. This facilitates the control of manufacturing process as well as the setting of manufacturing conditions, and enables semiconductor devices to be manufactured with a high yield. |
