| 摘要 |
PURPOSE:To utilize a desired region among the dielectric isolated element regions in an electrically independent manner from the other regions, by providing second isolation films for electrically isolating one or more dielectric isolated regions from the other regions, and applying a bias voltage to these isolated regions. CONSTITUTION:A substrate 1 is provided with dielectric isolated element regions 3 by means of oxide films 2. The substrate 1 is further provided with a second dielectric isolation region 4 including one or more said element regions 3, also by means of an oxide film 2. A bias voltage is applied to the second dielectric isolation region 4 through a bias voltage applying circuit 5. In this manner, any desired region among the dielectric isolated element regions can be utilized in an electrically independent manner from the other regions. |
