发明名称 MULTILAYER INTERCONNECTION STRUCTURE AND MANUFACTURE THEREOF
摘要 PURPOSE:To enable multilayer interconnection to be realized in a high density and at a low cost, by utilizing a photosensitive polymeric resin for polymeric resin films interposed between interconnection conductor layers. CONSTITUTION:A circuit element 2 is provided on the surface region of a substrate 1 of a semiconductor or the like. The surface of the substrate is covered with an insulation film and a first interconnection conductor layer 5 is formed to be connected to an electrode 4 of the circuit element. Subsequently, a polymer is applied thereon, and it is heated and cured so as to form a first polymeric resin insulation film 6. An aperture 7 is provided at a predetermined position of the insulation film 6. A second interconnection conductor layer 8 is formed thereon. A polymer containing a photosensitive agent is applied to form a photosensitive polymeric resin film 9 and then the polymer in the nonphotosensitive region is removed to form an aperture 10. Subsequently, the remaining polymer is heated and cured. According to this construction, it is possible to realize electric connection with a low resistance and to provide the underlying interconnection conductor layer with a smaller size than that of the aperture in the insulation film. Consequently, it is possible to realize multilayer interconnection with a high density.
申请公布号 JPS61230337(A) 申请公布日期 1986.10.14
申请号 JP19850070932 申请日期 1985.04.05
申请人 HITACHI LTD 发明人 KENMOCHI AKIHIRO;YOSHIMOTO MITSUO
分类号 H01L21/768;H01L21/312;H01L23/522 主分类号 H01L21/768
代理机构 代理人
主权项
地址