| 摘要 |
PURPOSE:To form a FET proper to integration, to give extremely high mutual conductance and to enable superspeed operation by controlling two-element electrons shaped on the interface between a first semiconductor layer and a second semiconductor layer by holes diffused and stored onto the interface between the second semiconductor and a third semiconductor from a fourth semiconductor layer. CONSTITUTION:A high-purity GaAs layer 8 in 1mum thickness is grown on a semi- insulating GaAs substrate, and a high purity layer 9 in 40Angstrom thickness, an N-Al0.4Ga0.6 As layer 10 containing an Si impurity of 1X10<18>cm<-3> and having 300Angstrom thickness and a P<+>-Al0.4Ga0.6As layer 11 containing a Be impurity of 3X10<19>cm<-3> and having 100Angstrom thickness are grown. A gate electrode consisting of Al is evaporated and patterned, and the unnecessary N-Al0.4Ga0.6As layer 11 and P<+>-Al0.4Ga0.6As layer 10 are removed. Si ions are implanted into GaAs as an N-type impurity while employing the gate electrode as a mask, and a source region 12 and a drain region 13 are formed through an annealing process. AuGe/Au are evaporated and alloyed to one parts of these regions to shape a source electrode and a drain electrode. Accordingly, a semiconductor device, the degree of integration thereof is easily improved and the whole system thereof can be operated at superspeed, is acquired. |
