| 摘要 |
PURPOSE:To form openings in an object to be etched which are narrower by the width of the layers of a predetermined substance by forming a layer of a predetermined substance on the inner wall of the openings of a film which has openings on an object to be etched, and with the layers of a predetermined substance as a mask, anisotropically etching the object to be etched. CONSTITUTION:Resist 8 having openings 8a, 8b is formed on, e.g., an SiO2 film 7, and SiO2 films 9a, 9b are formed on the inner wall of the openings 8a, 8b. Then,with the SiO2 films 9a, 9b as a mask the SiO2 film 7 is anisotropically etched, thereby forming openings 7a, 7b. With this, the openings 7a, 7b can be formed which are narrower in width than the width of the openings 8a, 8b of the photo resist 8 by a length corresponding to two times of the width of the SiO2 films 9a, 9b formed on the inner walls of the openings 8a, 8b of the resist 8, and fine processing is thus possible. |
