| 摘要 |
PURPOSE:To enable the growth deposit of an insulation film or the like having an excellent quality at a low temperature and with a high mass productivity, by providing a principal reaction chamber for receiving light, a plasma generation chamber connected to the principal reaction chamber and an electrode for taking out the plasma from the plasma generation chamber and leasing it to the principal reaction chamber. CONSTITUTION:An insulation film is deposited by growth through the photochemical reaction within a principal reaction chamber 11 at a low temperature, and then an etching gas is introduced into a plasma generation chamber 12 to produce plasma therein. The plasma or excited species of the etching gas is taken out by applying a bias voltage to a plasma take-out electrode 14, so that the film adhered on the tube wall of the principal reaction chamber 11 is plasma etched, and that thus the repeated growth is enabled. An ultraviolet lamp 4 is provided closely to the reaction tube 1 so as to increase the amount of light reaching inside the reaction tube 1 and hence to increase the speed of growth of the film. In this manner, an insulation film can be grown at a low temperature. |
