| 摘要 |
A unique inverse processed film resistance heater structure is disclosed. A conventional passivation wear layer is deposited directly on a first substrate, followed by the deposition and patterning of resistive and conductive layers, and covered by an isolation layer and a thick support layer. The thick support layer is then bonded to a second substrate and the first substrate is removed so that a uniform, flat passivation layer is exposed. The result is a film resistor which has a reduced failure rate as compared to the prior art because it is covered by a passivation wear layer with fewer pin-holes and reduced stress.
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