| 摘要 |
PURPOSE:To execute sufficient connection between the bump electrodes of a chip and the bump electrodes of an other chip with a very weak pressure by a method wherein a conductive material having a melting point lower than that of the bump electrodes is interposed between the bump electrodes of both chips and melted to connect the bump electrodes. CONSTITUTION:Low-melting point conductive materials M1 are formed on bump electrodes B1 on a chip 1 and low-melting point conductive materials M2 having the same thickness as that of the conductive materials M1 are formed on bump electrodes B2 on a chip 2 as well. Both chips 1 and 2 are heated, the low-melting point conductive materials M1 and M2 only are fused and a bounding is performed at a pressure so weak that the chip 1 is placed on the chip 2. When the bonding is performed in such a way, the low-melting point conductive materials are fused and the connection between the bump electrodes of both chips can be sufficiently kept even though the heights of the bump electrodes are somewhat irregular. |
