| 摘要 |
PURPOSE:To form an ohmic electrode with less contact resistance easily by a method wherein an ohmic electrode is formed in a groove with an opening larger than the bottom space of a semiconductor substrate bringing the electrode into contact with the sides of groove. CONSTITUTION:A semiconductor substrate composed of a semiinsulating GaAs layer 1, an Si added N-GaAs layer 2 and not added with any impurity GaAs layer 3 is coated with a negative type resist 4. Firstly the resist 4 is selectively removed to form a resist pattern 5. Secondly the pattern 5 is etched downward using Ar ion beams 7 until the layer 3 is pierced. An opening gradually growing larger is made in the pattern 5 to form a groove with its opening space larger than the bottom space of semiconductor substrate. When ohmic electrode material 9 is evaporated on the surface, the material 9 is also evaporated on the side of groove 8. Through these procedures, an ohmic electrode with less contact resistance can be formed easily subject to no strangulation in current circuit due to formation of a depletion layer. |
