| 摘要 |
PURPOSE:To simplify the assembling process, by closely contacting in the clean atmosphere the region of low resistivity on the anode structure of the both- surface planar-type thyristor with the channel stopper and making the junction. CONSTITUTION:By introducing B from both surfaces of the N-type semiconductor substrate 1, the P-type regions 2 and 3 are formed, whose ends are exposed on both surfaces of the substrate 1. Into the region 2, P is introduced to form the N<+> region 4. The channel stoppers 5 are formed on the confronting ends of the surface of the substrate 1. The P-type semiconductor substrate is prepared, and after the recessed part 7 is formed on its one surface, the silicon oxide layer 8 is deposited, which is subjected to cutting to expose the P-type region 6. Thus the region 6 with the ring type layer 8 is obtained, which is integrated in a body with the substrate 1 through the junction layer 7. |
