| 摘要 |
PURPOSE:To obtain the sensor without the leak current, by performing the side-etching of the upper electrode with the pattern body of the photoresist, and performing the selective etching and elimination of the photoelectric conversion part by using the pattern body as the mask. CONSTITUTION:The lower electrode 2 of indium-tin oxide is laminated on the glass substrate 1. The amorphous silicon layer 3 is laminated as the photoelectric conversion part. In this lamination process, the P-type layer 3a, the I-type interlayer 3b and the N-type layer 3c are laminated by mixing diborane, etc. The Al upper electrode 4 is laminated on the layer 3. After the pattern body 5 of the photoresist is formed on the electrode 4, the electrode 4 is selectively eliminated by the side-etching. The photoelectric conversion part 3 is selectively eliminated by applying the pattern body 5 as the mask, and the pattern body 5 is eliminated. |
