| 摘要 |
PURPOSE:To constitute a semiconductor device having arbitrary electrical characteristics in a complementary MOS field-effect transistor, by a method wherein a field effect is given the gate constituent part. CONSTITUTION:A P-type well 4 is formed in an N-type substrate 2, and at the same time, a P-type drain region 6 and a P-type source region 8 are formed and an N-type drain region 10 and an N-type source region 12 are formed in the N-type well 4. The impurity concentrations of parts of a channel region 14 to be formed between the drain region 6 and the source region 8 or the impurity concentrations of parts of a channel region 16 to be formed between the drain region 10 and the source region 12 are made higher or lower. By this way, as a result of enabling the impurity concentrations of the channel regions 14 and 16 to differ locally, a field effect can be given to the gate part, thereby making it possible to realize the semiconductor device having arbitrary characteristics of a higher-speed operation, higher voltage withstanding, etc. |
