| 摘要 |
PURPOSE:To reduce the leakage current among a plurality of the polycrystalline Si electrodes consisting of an amorphous Si film and to raise the resolution of a photoelectric conversion device by a method wherein the polycrystalline Si having a conductivity type opposite to that of the polycrystalline Si electrodes is used for isolating the polycrystalline Si electrodes from one another. CONSTITUTION:A polycrystalline Si film is formed on the whole surface of a substrate 1, and after that, boron is implanted in polycrystalline Si film isolating parts 3 leaving parts, where are to be used as polycrystalline Si electrodes 2, and the isolating parts 3 are converted into the P-type polycrystalline Si regions. Then, an ion-implantation of phosphorus is performed in the parts of the electrodes 2 and the parts of the electrodes 2 are converted into the N-type polycrystalline Si electrodes 1. Moreover, after an activation annealing treatment is performed, an amorphous silicon film 4, which is used as the photoelectric conversion film, is formed. Then, a blocking layer 6 to be used for avoiding the effect of an electrode 5 is formed and the transparent electrode 5 is provided on the surface. |
