发明名称 SEMICONDUCTOR MEMORY ELEMENT
摘要 PURPOSE:To shorten a cycle time by constituting a read data latch circuit and a selecting means with a static circuit. CONSTITUTION:Due to the activation of a row address strobe signal RAS and a column address strobe signal CAS data totaling four bits are simultaneously read out of respective blocks M0-M3 of a memory array 1, and fetched into read data latch circuits RDL0-RDL3 composed of the static circuit through I/O common data lines I00--I03. With the activation of an I/O enable signal IOE selecting signals specified by address signals Ai and Aj are sequentially activated one by one to turn on sequentially MOS transistors Q, and data held in the latch circuits RDL0-RDL3 are passed through a pair of output data lines D0B/-D0B and impressed to a data output buffer 6. Simultaneously a gate signal OE from a control circuit 5 is activated, and a read data signal is outputted.
申请公布号 JPS61229298(A) 申请公布日期 1986.10.13
申请号 JP19850068936 申请日期 1985.04.03
申请人 HITACHI LTD 发明人 KURIHARA RYOICHI;TABEI TAKASHI
分类号 G11C11/401;G06F12/04;G06F12/06;G11C7/00;G11C11/34 主分类号 G11C11/401
代理机构 代理人
主权项
地址