| 摘要 |
PURPOSE:To enable the sensitivity curve of a photoresist to be automatically measured in a short time by exposing a wafer sample coated with the photoresist film to light continuously changed in exposing time, developing this sample, and continuously measuring the remaining film thickness. CONSTITUTION:The wafer sample 1 coated with the photoresist film is exposed by placing it on a sample stand 4, moving it at a constant speed to introduce the sample 1 into a light irradiation region S, reversing the motion of a sliding device 2 immediately before the rearward end T of the sample 1 enters the region S, and returning the sample 1 to the initial position, and then, the sample 1 is developed. The remaining film thickness of the sample 1 is measured by again placing it on the stand 4, projecting laser beams from a light projecting and receiving probe 12, driving the device 2 to move the sample 1 so as for the laser beams to scan the position of the photoresist long in the exposure time, i.e., the thinner film thickness side, to the position short in the exposure time, i.e., the thicker film side, and measuring the intensity of the interfered light changing in accordance with the film remaining thickness with a photodetector 14. |
