| 摘要 |
PURPOSE:To make the improvement of film productivity and mass production easy while contriving to improve the properties of a film, a film forming speed and reproducibility and the uniformity of film quality by chemical reaction irradiating light energy, making the coexistence of a compound containing germanium and a halogen and an active species made from a compound containing silicon for forming film. CONSTITUTION:A compound containing germanium and a halogen and an active species made from a silicon containing compound which reacts chemically with the compound and is used for forming a film are each introduced in a film forming space 101 and a deposition film is formed on a substrate 103 by a chemical reaction irradiating light energy. For example, the substrate 103 made of a polyethylene terephtalate film is placed on a susceptor 102, the film forming chamber 101 is exhausted, then Si5H10 is introduced in an activation chamber 123 from a cylinder 106 for gas supply, is activated by a microwave plasma generation equipment 122 and introduced in the film forming chamber 101. Whereas, CF4 gas is introduced in the film forming chamber 101 from a supply source 12 and an A-Ge(Si,H,X) film is formed irradiating light 118 from a light energy generation equipment. |
