| 摘要 |
PURPOSE:To increase wiring density and to make it possible to form a multilayer interconnection for a stable highly reliable semiconductor circuit, by applying and burning a solution, whose main component is a nitrogen compound, on a first interlayer insulating film by a sputtering method, thereby forming a second interlayer insulating film. CONSTITUTION:An oxide film 2 is provided on a semiconductor substrate 1. A first-layer aluminum electrode wiring 3 is formed thereon as a lower-layer electrode wiring. Then, a silicon oxide film 14 is deposited by a sputtering method under the condition a bias is applied at, e.g., -200V on the semiconductor substrate. Then, an SOG film 5 is applied on the silicon oxide film 14 and burned. Thereafter, a plasma nitride film 6 is deposited thereon. As an upper electrode wiring, a second-layer aluminum wiring 7 is formed. When the sputtering is performed under the condition the substrate bias is applied, the silicon oxide film has a specified slant shape at one wiring step part. Therefore, voids are not yielded in the interlayer insulating film and therefore cracks are hard to occur. Thus wiring density and reliability can be improved. |
