| 摘要 |
PURPOSE:To make uniform the amt. of heat radiated from the whole body of a furnace in the longitudinal direction of the melt of starting material and to prepare a compound semiconductor single crystal having high quality in the prepn. of the compound semiconductor single crystal by providing heat radiating holes divided into plural sections to a furnace wall above the melt of the starting material for the semiconductor along the longitudinal direction of the melt. CONSTITUTION:A quartz reaction tube 2 is housed in a two-throw heating furnace 1 and the tube is evacuated and sealed after installing a long-sized quartz glass boat 3 in the inside of the tube. Melt 4 of the starting material for a group III-V compound semiconductor such as GaAs is charged to the boat 3 and a seed crystal 5 of GaAs is placed at an end part of the melt. Further, a volatile component 6 such as As having vapor pressure close to the dissociation pressure of GaAs is placed at another end of the reaction tube 2 which is longer than the boat 3. By controlling the volatile component, a temp. gradient along the longitudinal direction of the melt 4 is formed, and the amt. of radiated heat in the longitudinal direction of the melt 4 from the whole body is made uniform by the many heat radiating holes 8 formed by the many separating walls 9 to permit forming of GaAs single crystal of high quality on the seed crystal 5.
|
