| 摘要 |
PURPOSE:To remove the stepped part of an interlayer insulating film and flatten the surface, by forming a viscosity material on the interlayer insulating film, burying the recess part in the interlayer insulating film, removing the viscosity material until the interlayer insulating film becomes a specified thickness, and etching away the interlayer insulating film until a specified thickness is obtained with the viscosity material remaining in the recess as a mask. CONSTITUTION:On a semiconductor substrate 1 comprising silicon and the like, a metal wiring 2 comprising Al and the like is formed by patterning. An interlayer insulating film 3 comprising an insulating film such as a silicon oxide film or a silicon nitride film is formed on the entire surface by a plasma CVD method and the like. At this time, a recess part 3a corresponding to the pattern of the metal wiring, i.e., the recess part of the metal wiring 2, is formed on the surface of the interlayer insulating film. Thereafter, the recess part 3a is buried by applying a viscosity material 4 such as resist on the entire surface of the interlayer insulating film 3. The viscosity material 4 is removed to the surface of the interlayer insulating film 3 by dry etching. Then, with the viscosity material 4 remaining in the recess part 3a as a mask, the viscosity material 4 on the interlayer insulating film 3 is removed. Then, the new interlayer insulating film 3 is formed on the entire surface. |
