| 摘要 |
<p>Thin layer deposited on a substrate, essentially comprised of a ruthenium salt RuX2, X being selected amongst sulphur, selenium and tellurium; its preparation by heating the substrate (3) and reactive deposition of vapours of an organometallic derivative of ruthenium which are entrained from the source (6) by a vector gas coming from (A) and of H2X vapours coming from the source (D) entrained by a vector gas coming from (C); its utilization particularly in the making of semiconductor components or mountings, or as protection coating.</p> |
