发明名称 COMPLEMENTARY FET DELAY/LOGIC CELL
摘要 <p>An integrated circuit comprises a pass transistor (M40) connected to the input of a complementary inverter pair. Means (403) are included to supply to the complementary inverter a reduced voltage, as compared to the signal voltage supplied to the gate of the pass transistor. In this manner, the switching threshold of the inverter is reduced, allowing a single conductivity type of pass transistor to be advantageously used. In one embodiment, the reduced voltage is obtained by a diode-connected enhancement type field effect transistor, producing a threshold voltage drop. In another embodiment, means for supplying three power supply voltages are utilized. A delay stage for a shift register can advantageously be implemented by the present technique. Transmission gate logic circuits can also be implemented by the present technique.</p>
申请公布号 WO1986005935(A1) 申请公布日期 1986.10.09
申请号 US1986000412 申请日期 1986.02.25
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