发明名称 THIN METALLIC FILM FORMING DEVICE
摘要 PURPOSE:To make the formation of a uniform thin metallic film having a large area possible by combining plural permanent magnets of which the polarities are alternately combined to the circumference of the outside wall of a plasma generating chamber and impressing voltage between the inside wall thereof and a target disposed in the aperture. CONSTITUTION:The DC voltage is impressed between a plasma generating vessel 1 of a thin metallic film forming device and a cathode electrode 3 and gas such as Ar introduced through a gas introducing port 4 is ionized by an arc discharge to form plasma. The plural permanent magnets 2 of which the polarities are alternately combined are disposed to the circumference of the outside wall of the above-mentioned vessel 1 to form a cusp magnetic field and to confine efficiently the above-mentioned plasma into the vessel 1. The density is further increased by the magnetic field formed by a cylindrical coil 6 wound on the outside circumference of the permanent magnets 2. The voltage is impressed between the vessel 1 and the plasma electrode 7 provided in the aperture to accelerate the Ar<+> ions and to sputter the electrode 7. The sputter particles are led out together with the ion beam formed by an electrode system for leading out consisting of the plasma electrode 7, accelerating electrode 8 and decelerating electrode 9 and stuck on a substrate 16, thus forming the thin metallic film thereon.
申请公布号 JPS61227168(A) 申请公布日期 1986.10.09
申请号 JP19850066318 申请日期 1985.03.29
申请人 HITACHI LTD 发明人 SATO TADASHI;KUROSAWA TOMOE;OSHITA YOICHI;ONO YASUNORI
分类号 C23C14/46 主分类号 C23C14/46
代理机构 代理人
主权项
地址