| 摘要 |
PURPOSE:To enable light capable of causing interference to be used by forming a light receiving layer obtained by laminating the first a-SiGe layer and the second photoconductive a-Si layer in succession on a substrate and having a specified layer structure, and incorporating a conductivity dominating substance in a specified distribution. CONSTITUTION:The first layer 1002 made of a-SiGe and the second photoconductive layer 1003 made of a-Si are formed in this order on the side of a substrate 1001 to form a light receiving layer of multilayer structure, and at least one of the layers 1002, 1003 contains a conductivity dominating substance, such as elements of group III, in a concn. distribution non-uniform in the layer thickness direction in the layer region contg. this substance. The layer 1000 has one or more pairs of nonparallel interfaces in a minute part, and a large numbers of these interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction. The increase of the constituent layers in the layer 1000 prevents the interference effect of illumination light. Since interference fringes occurring in the minute part are smaller than the diameter of the spots of the illumination light, i.e., smaller than the limit of the resolution, the interference fringes do not appear, thus permitting such fringes to be prevented, and this light receiving layer to be used for laser beams. |
