发明名称 GRINDSTONE FOR WAFER GRINDING
摘要 PURPOSE:To perform wafer grinding so efficiently with a single spindle grinder, by making each grain size of plural abrasive grain layers formed in a concentrically circular form on one main surface of a disclike base body to be the smaller the more inside and the grinding allowance portion the higher the more inside. CONSTITUTION:Plural abrasive grain layers 3, 4 and 5 containing abrasive grains being finely granulated from rough abrasive grains to ward the inner circumferential side from the outer circumferential side in order are formed on one main surface of a disclike base plate. In addition, height of the abrasive grain layer at the inside is formed to be higher than that of the abrasive grain layer at the outside as far as the grinding allowance portion between adjacent abrasive grain layers, whereby first a wafer surface is roughly ground by the abrasive grain layer 3 at the outermost side and than the wafer surface is roughly finished with the intermediate abrasive grain layer 4. Next, the wafer surface is finely ground as final finishing by the abrasive grain layer 5 at the innermost side.
申请公布号 JPS61226272(A) 申请公布日期 1986.10.08
申请号 JP19850065408 申请日期 1985.03.29
申请人 TOSHIBA CORP 发明人 NODA YASUMASA
分类号 B24D7/06;H01L21/304 主分类号 B24D7/06
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